Faculty Profile

Dr. Nauman Zafar Butt

Assistant Professor

Department of Electrical Engineering

Nauman Z. Butt did his Ph.D. in Electrical Engineering from Purdue University in 2008 and B.S. in the same field from University of Engineering & Technology, Lahore in 2002. From 2008 to 2012, he was a member of technical staff in Semiconductor Research & Development Center (SRDC) in IBM Microelectronics Division, Hopewell Junction, NY.

Dr. Butt’s research interests include investigating physics and technology of microelectronic and optoelectronic devices through theory, compact modeling, simulations and experiments. His Ph.D. thesis was on computational study of scaling and radiation damage in nanoscale memory devices. In IBM, he has been involved in the development of embedded DRAM and dense SRAM devices in 32nm and 14nm SOI technology.

Title Publication Author Year
Investigation of optimal tilt angles and effects of soiling on PV energy production in Pakistan Renewable Energy Ullah A., Imran H., Maqsood Z., Butt N.Z. 2019
Computational modeling of polycrystalline silicon on oxide passivating contact for silicon solar cells IEEE Transactions on Electron Devices Younas R., Imran H., Shah S.I.H., Abdolkader T.M., Butt N.Z. 2019
Modeling of TiO2-Based Electron-Selective Contacts for Crystalline Silicon Solar Cells IEEE Transactions on Electron Devices Ullah H., Imran H., Butt N.Z. 2018
High-Performance Bifacial Perovskite/Silicon Double-Tandem Solar Cell IEEE Journal of Photovoltaics Imran H., Durrani I., Kamran M., Abdolkader T.M., Faryad M., Butt N.Z. 2018
Computational modeling of hybrid graphene/quantum dot photodetectors International Conference on Simulation of Semiconductor Processes and Devices, SISPAD Imran H., Iqbal S., Farooq A., Butt N.Z. 2017
Design of high performance Graphene/Silicon photodetectors International Conference on Simulation of Semiconductor Processes and Devices, SISPAD Iqbal S., Imran H., Qasim U.B., Butt N.Z. 2017
Investigation of dominant hysteresis phenomenon in perovskite solar cell 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 Imran H., Butt N.Z. 2017
Investigation of dominant hysteresis phenomenon in perovskite solar cell Conference Record of the IEEE Photovoltaic Specialists Conference Imran H., Butt N.Z. 2016
Role of Carrier Mobility and Band Alignment Engineering on the Efficiency of Colloidal Quantum Dot Solar Cells IEEE Journal of Photovoltaics Saad R., Butt N.Z. 2016
Carrier-Selective NiO/Si and TiO2/Si Contacts for Silicon Heterojunction Solar Cells IEEE Transactions on Electron Devices Imran H., Abdolkader T.M., Butt N.Z. 2016
Substrate-Induced Photofield Effect in Graphene Phototransistors IEEE Transactions on Electron Devices Butt N.Z., Sarker B.K., Chen Y.P., Alam M.A. 2015
Computational study of hybrid nanomaterial/insulator/silicon solar cells IEEE Transactions on Electron Devices Imran H., Butt N.Z. 2015
The role of substrate in the photoresponse of graphene transistors Device Research Conference - Conference Digest, DRC Imran H., Sarker B.K., Chen Y.P., Alam M.A., Butt N.Z. 2015
Dark current suppression in quantum dot solar cells through interfacial engineering 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 Butt N.Z., Sarwar A., Sadiq M.M., Mazher K.U. 2014
Modeling and analysis of transistor mismatch due to variability in short-channel effect induced by random dopant fluctuation IEEE Electron Device Letters Butt N.Z., Johnson J.B. 2012
A 0.039um 2 high performance eDRAM cell based on 32nm high-K/metal SOI technology Technical Digest - International Electron Devices Meeting, IEDM Butt N., Mcstay K., Cestero A., Ho H., Kong W., Fang S., Krishnan R., Khan B., Tessier A., Davies W., Lee S., Zhang Y., Johnson J., Rombawa S., Takalkar R., Blauberg A., Hawkins K.V., Liu J., Rosenblatt S., Goyal P., Gupta S., Ervin J., Li Z., Galis S., Barth J., Yin M., Weaver T., Li J.H., Narasimha S., Parries P., Henson W.K., Robson N., Kirihata T., Chudzik M., Maciejewski E., Agnello P., Stiffler S., Iyer S.S. 2010
Scaling deep trench based eDRAM on SOI to 32nm and beyond Technical Digest - International Electron Devices Meeting, IEDM Wang G., Anand D., Butt N., Cestero A., Chudzik M., Ervin J., Fang S., Freeman G., Ho H., Khan B., Kim B., Kong W., Krishnan R., Krishnan S., Kwon O., Liu J., McStay K., Nelson E., Nummy K., Parries P., Sim J., Takalkar R., Tessier A., Todi R.M., Malik R., Stiffler S., Iyer S.S. 2009
Modeling single event upsets in floating gate memory cells IEEE International Reliability Physics Symposium Proceedings Butt N.Z., Alam M. 2008
Scaling limits of capacitorless double gate DRAM cell International Conference on Simulation of Semiconductor Processes and Devices, SISPAD Butt N., Alam M.A. 2007
Soft error trends and new physical model for ionizing dose effects in double gate Z-RAM cell IEEE Transactions on Nuclear Science Butt N.Z., Yoder P.D., Alam M.A. 2007
Scaling limits of double-gate and surround-gate Z-RAM cells IEEE Transactions on Electron Devices Butt N.Z., Alam M.A. 2007
Low-frequency noise statistics for the breakdown characterization of ultrathin gate oxides Applied Physics Letters Butt N.Z., Chang A.M., Raza H., Bashir R., Liu J., Kwong D.L. 2006